A Survey of Oxygen Loss and Kinetics of TD Formation in Short-Annealed CZ-Silicon at 450oC

Abstract

Czochralski silicon (CZ-Si) is the primary material for integrated circuits and CMOS industry. Oxygen gets incorporated in silicon during the crystal-pulling process and is present in the grown crystal material in a supersaturated state. Hence during thermal treatments, it will tend to form clusters and precipitates.

Therefore, thermal donor formation during heat treatment of CZ silicon is important to study. In this work, important information about TDs formed in short annealing durations at 450 oC has been obtained by IR absorption due to the electronic transitions, by which the change in concentration of oxygen with annealing time is studied. Then by knowing the amount of oxygen loss in the process, diffusivity and hence the activation energy for the formation of TD clusters is presented successfully.