Effect of The Presence of Carbon on the Course of Oxygen Related Donors (ODs) in Czochralski Silicon in Transition Region

Abstract

Generation and behaviour of thermal donors (TD) and new donors (ND) as a result of annealing in transition temperature range (450°C-650°C) of carbon-rich boron-doped (p-type) CZ-silicon has been studied, as function of annealing time as well as of annealing temperature, by Hall studies, resistivity measurements and by FTIR studies. Transformation of TDs into NDs is studied with simultaneous appearance of thermal acceptors (TAs). It is seen that the conversion of incoming p-type sample to n-type is slow due to the compensation mechanism. Presence of carbon is found to suppress the growth of TDs, but to enhance TD annihilation. Carbon is also seen to enhance ND formation but not taking part in ND formation, itself.